NVMFS4C308NT1G The NVMFS4C308NT1G is an N-Channel MOSFET from On Semiconductor with a 30V drain-to-source voltage and low Rds(on) of 4.8mOhm at 10V Vgs. It is designed for applications requiring efficient power switching.
Mfr Part #:

NVMFS4C308NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFS4C308NT1G is an N-Channel MOSFET from On Semiconductor with a 30V drain-to-source voltage and low Rds(on) of 4.8mOhm at 10V Vgs. It is designed for applications requiring efficient power switching.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.99

NVMFS4C308NT1G Available from 1 distributor

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NVMFS4C308NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS4C308NT1G Description

Short technical summary and product information.

This N-Channel MOSFET, part number NVMFS4C308NT1G from On Semiconductor, is designed for power applications. It features a maximum drain-to-source voltage (Vds) of 30V and a low on-resistance (Rds On) of 4.8mOhm at a gate-to-source voltage (Vgs) of 10V. The continuous drain current is rated at 55A under specific conditions.

 

Key electrical characteristics include an input capacitance (Ciss) of 1670 pF at 15V and a gate charge (Qg) of 18.2 nC at 10V. The device operates within a temperature range of -55°C to 175°C.

 

The NVMFS4C308NT1G is housed in a 5-DFN (5x6) package and is designed for surface mounting. Its features, such as low conduction and switching losses, make it suitable for applications like reverse battery protection and DC-DC converter output drivers.

NVMFS4C308NT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS4C308NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS4C308NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS4C308NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS4C308NT1G Features

  • 30V drain-to-source voltage rating.
  • Low 4.8mOhm Rds On at 10V Vgs.
  • High 55A continuous drain current.
  • Surface mount 5-DFN package.
  • Optimized for low conduction losses.

NVMFS4C308NT1G Applications

  • Suitable for reverse battery protection circuits.
  • Used in DC-DC converter output drivers.
  • Ideal for low-voltage power switching applications.
  • Applicable in high-current load switching.
  • Suitable for thermal management in power circuits.

NVMFS4C308NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS4C308NT1G?

The maximum drain-to-source voltage (Vds) is 30V.

What is the Rds On resistance of the NVMFS4C308NT1G?

The Rds On resistance is a maximum of 4.8mOhm at 30A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 17.2A at 25°C ambient temperature and 55A at 25°C case temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS4C308NT1G available in?

It is available in a 5-DFN (5x6) package.

Is the NVMFS4C308NT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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