NVMFS4C03NWFT1G The On Semiconductor NVMFS4C03NWFT1G is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NVMFS4C03NWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS4C03NWFT1G is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 1,500 pcs
$ Price Range: $0.99

NVMFS4C03NWFT1G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,500 pcs
1500 pcs On Request 1 On Request On Request 1747+ On Request On Request

NVMFS4C03NWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS4C03NWFT1G Description

Short technical summary and product information.

This N-Channel MOSFET, part number NVMFS4C03NWFT1G from On Semiconductor, is designed for efficient power management. It offers a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current capability of 31.4A at 25°C ambient temperature, and up to 143A at 25°C case temperature.

 

The MOSFET boasts a low on-resistance (Rds(on)) of 2.1mOhm at 30A and 10V gate-to-source voltage, minimizing conduction losses. Its gate charge (Qg) is 45.2 nC maximum at 10V, contributing to reduced driver losses. The input capacitance (Ciss) is 3071 pF maximum at 15V.

 

With a maximum power dissipation of 3.71W at 25°C ambient and 77W at 25°C case, this device is suitable for demanding applications. It operates within a junction temperature range of -55°C to 175°C.

 

The NVMFS4C03NWFT1G is housed in a compact 5-DFN (5x6) (8-SOFL) surface mount package, facilitating space-constrained designs. It is AEC-Q101 qualified and RoHS compliant, ensuring reliability and adherence to environmental standards.

NVMFS4C03NWFT1G Quick Information

Product Type: MOSFET
Series: NVMFS4C03NWFT1G
Canonical Name: N-Channel Logic Level Power MOSFET
Subcategory: N-Channel

NVMFS4C03NWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS4C03NWFT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS4C03NWFT1G Features

  • N-Channel MOSFET with 30V drain-to-source voltage.
  • Low Rds(on) of 2.1mOhm at 30A, 10V.
  • High continuous drain current capability.
  • Compact 5-DFN surface mount package.
  • AEC-Q101 qualified for reliability.

NVMFS4C03NWFT1G Applications

  • Suitable for power switching applications.
  • Ideal for DC-DC converters.
  • Used in motor control circuits.
  • Applicable in power supply units.

NVMFS4C03NWFT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS4C03NWFT1G?

The maximum drain-to-source voltage (Vdss) for the NVMFS4C03NWFT1G is 30V.

What is the typical on-resistance of the NVMFS4C03NWFT1G?

The maximum on-resistance (Rds On) for the NVMFS4C03NWFT1G is 2.1mOhm at 30A drain current and 10V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction temperature range for the NVMFS4C03NWFT1G is -55°C to 175°C.

Is the NVMFS4C03NWFT1G RoHS compliant?

Yes, the NVMFS4C03NWFT1G is RoHS3 Compliant.

What package type is the NVMFS4C03NWFT1G supplied in?

The NVMFS4C03NWFT1G is supplied in a 5-DFN (5x6) (8-SOFL) surface mount package.

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