| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,500 pcs
|
22500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS4C01NWFT1G is a single N-Channel MOSFET from On Semiconductor, designed for power applications. It features a drain-to-source voltage (Vdss) of 30V and a maximum continuous drain current of 49A when measured at the case temperature (Tc) of 25°C, and 319A at the same temperature. The device exhibits a low on-resistance of 0.9mOhm at 30A and 10V.
This MOSFET operates within a junction temperature range of -55°C to 175°C. It is constructed using MOSFET (Metal Oxide) technology and is available in a compact 5-DFN (5x6) (8-SOFL) surface mount package. The device is Pb-Free and Halogen Free compliant.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.2V at 250µA, a maximum gate-to-source voltage (Vgs) of ±20V, and a gate charge (Qg) of 139 nC at 10V. The input capacitance (Ciss) is 10144 pF at 15V. Power dissipation is rated at 3.84W (Ta) and 161W (Tc).
The NVMFS4C01NWFT1G is suitable for various power switching applications where low conduction losses and efficient driver performance are required. Its small footprint and surface mount capability make it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 49A at 25°C ambient and 319A at 25°C case temperature.
The maximum on-resistance is 0.9mOhm at 30A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting.
Yes, the device is RoHS3 Compliant.