NVMFS4C01NT1G The On Semiconductor NVMFS4C01NT1G is an N-Channel MOSFET with a 30V drain-to-source voltage. It offers low on-resistance and high current handling capabilities in a compact surface-mount package.
Mfr Part #:

NVMFS4C01NT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS4C01NT1G is an N-Channel MOSFET with a 30V drain-to-source voltage. It offers low on-resistance and high current handling capabilities in a compact surface-mount package.
✓ Total Stock: 41,369 pcs
$ Price Range: $0.99

NVMFS4C01NT1G Available from 3 distributors

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✓ Non-Authorised
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19,020 pcs
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18,000 pcs
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4,349 pcs
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NVMFS4C01NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS4C01NT1G Description

Short technical summary and product information.

The NVMFS4C01NT1G is an N-Channel MOSFET from On Semiconductor designed for power applications. It features a maximum drain-to-source voltage of 30V and a low on-resistance of 0.9mOhm at 30A and 10V Vgs. The device can handle a continuous drain current of up to 370A at 25°C case temperature and 57A at 25°C ambient temperature.

 

This MOSFET is built using MOSFET (Metal Oxide) technology and operates within a temperature range of -55°C to 175°C. Key electrical characteristics include an input capacitance of 10144 pF and a gate charge of 139 nC. The device is supplied in a compact 8-PowerTDFN, 5-lead package, suitable for surface mounting.

 

Designed for efficiency, the NVMFS4C01NT1G minimizes conduction losses due to its low RDS(on) and driver losses due to low QG and capacitance. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for demanding applications. The device is also Pb-Free and Halogen Free, complying with RoHS standards.

NVMFS4C01NT1G Quick Information

Product Type: MOSFET
Series: NVMFS4C01NT1G
Canonical Name: NVMFS4C01NT1G N-Channel MOSFET
Subcategory: N-Channel

NVMFS4C01NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS4C01NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS4C01NT1G Features

  • 30V drain-to-source voltage rating.
  • Low 0.9mOhm on-resistance.
  • High 370A continuous drain current.
  • Compact 8-PowerTDFN surface-mount package.
  • AEC-Q101 Qualified and PPAP Capable.

NVMFS4C01NT1G Applications

  • Suitable for power switching applications.
  • Designed for compact electronic systems.
  • Used in high-current power designs.
  • Ideal for applications requiring low conduction loss.

NVMFS4C01NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFS4C01NT1G?

The maximum drain-to-source voltage (Vds) is 30V.

What is the typical on-resistance of the NVMFS4C01NT1G?

The on-resistance (Rds On) is a maximum of 0.9mOhm at 30A and 10V Vgs.

What is the continuous drain current rating?

The continuous drain current is rated at 370A when measured at the case temperature of 25°C, and 57A when measured at an ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFS4C01NT1G supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).

Is the NVMFS4C01NT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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