NVMFS3D0P04M8LT1G The ON Semiconductor NVMFS3D0P04M8LT1G is a P-Channel MOSFET with a 40V drain-to-source voltage. It offers high current capability and low on-resistance.
Mfr Part #:

NVMFS3D0P04M8LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS3D0P04M8LT1G is a P-Channel MOSFET with a 40V drain-to-source voltage. It offers high current capability and low on-resistance.
✓ Total Stock: 3,126 pcs
$ Price Range: $0.99

NVMFS3D0P04M8LT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,101 pcs
3101 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
25 pcs
25 pcs On Request 1 On Request On Request On Request On Request On Request

NVMFS3D0P04M8LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS3D0P04M8LT1G Description

Short technical summary and product information.

The NVMFS3D0P04M8LT1G from ON Semiconductor is a P-Channel MOSFET designed for power applications. It features a drain-to-source voltage (Vdss) of 40V and a high continuous drain current capability of up to 183A at the case temperature.

 

This MOSFET boasts a low on-resistance (Rds On) of 2.7 mOhm at 30A and 10V gate-source voltage, minimizing conduction losses. It operates within a wide temperature range of -55°C to 175°C.

 

The device is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. It is Pb-Free and Halogen Free, complying with modern environmental standards.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 2.4V at 2mA. Input capacitance is rated at 5827 pF at 20V, and gate charge is 124 nC at 10V.

NVMFS3D0P04M8LT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFS3D0P04M8LT1G P-Channel MOSFET
Subcategory: P-Channel

NVMFS3D0P04M8LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS3D0P04M8LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS3D0P04M8LT1G Features

  • P-Channel MOSFET with 40V Vdss.
  • Low Rds On of 2.7 mOhm at 30A, 10V.
  • High current capability up to 183A (Tc).
  • Wide operating temperature range: -55°C to 175°C.
  • Surface mount 5-DFN (5x6) (8-SOFL) package.

NVMFS3D0P04M8LT1G Applications

  • Suitable for high current power switching.
  • Designed for efficient power management.
  • Used in automotive applications.
  • Ideal for low conduction loss circuits.

NVMFS3D0P04M8LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage?

The drain-to-source breakdown voltage is -40 V.

What is the maximum continuous drain current?

The maximum continuous drain current is -183 A at TC = 25°C and -28 A at TA = 25°C.

What is the on-resistance of this MOSFET?

The on-resistance is a maximum of 2.7 mOhm at 30A and 10V gate-source voltage, and typically 2.7 mOhm at -10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the NVMFS3D0P04M8LT1G?

It is supplied in a 8-PowerTDFN, 5 Leads package, also described as 5-DFN (5x6) (8-SOFL), and is suitable for surface mounting.

Is this MOSFET RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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