NVMFS2D3P04M8LT1G The ON Semiconductor NVMFS2D3P04M8LT1G is a P-Channel MOSFET with a 40V drain-to-source voltage. It is designed for surface mount applications.
Mfr Part #:

NVMFS2D3P04M8LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFS2D3P04M8LT1G is a P-Channel MOSFET with a 40V drain-to-source voltage. It is designed for surface mount applications.
✓ Total Stock: 2,619 pcs
$ Price Range: $0.99

NVMFS2D3P04M8LT1G Available from 2 distributors

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NVMFS2D3P04M8LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS2D3P04M8LT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFS2D3P04M8LT1G is a P-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vds) of 40V and a low on-resistance (Rds On) of 2.2mOhm at 30A and 10V gate-source voltage.

 

This MOSFET offers a continuous drain current of 31A (Ta) and 222A (Tc) with a maximum power dissipation of 3.8W (Ta) or 205W (Tc). The operating temperature range is from -55°C to 175°C (TJ).

 

Packaged in an 8-PowerTDFN, 5-Lead (5-DFN 5x6) configuration, the NVMFS2D3P04M8LT1G is suitable for surface mounting. Key electrical parameters include an input capacitance (Ciss) of 5985pF at 20V and a gate charge (Qg) of 157nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.4V at 2.7mA, with a maximum gate-source voltage (Vgs) of ±20V.

NVMFS2D3P04M8LT1G Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET NVMFS2D3P04M8LT1G
Subcategory: P-Channel

NVMFS2D3P04M8LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS2D3P04M8LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS2D3P04M8LT1G Features

  • P-Channel MOSFET technology.
  • 40V drain-to-source voltage rating.
  • Low 2.2mOhm on-resistance.
  • High 222A continuous drain current.
  • Surface mountable 5-DFN package.

NVMFS2D3P04M8LT1G Applications

  • Suitable for high-current power switching applications.
  • Ideal for automotive and industrial motor drives.
  • Used in power supply and voltage regulation circuits.
  • Applicable in load switching for consumer electronics.
  • Suitable for high-temperature and high-voltage environments.

NVMFS2D3P04M8LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vds) for the NVMFS2D3P04M8LT1G MOSFET?

The drain-to-source voltage (Vds) for the NVMFS2D3P04M8LT1G MOSFET is 40V.

What is the maximum continuous drain current (Id) for the NVMFS2D3P04M8LT1G?

The maximum continuous drain current (Id) for the NVMFS2D3P04M8LT1G is 31A at 25°C ambient and 222A at 25°C case temperature.

What is the on-resistance (Rds On) of the NVMFS2D3P04M8LT1G MOSFET?

The maximum on-resistance (Rds On) for the NVMFS2D3P04M8LT1G MOSFET is 2.2mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range for the NVMFS2D3P04M8LT1G?

The operating temperature range for the NVMFS2D3P04M8LT1G is -55°C to 175°C (TJ).

What package type is the NVMFS2D3P04M8LT1G MOSFET supplied in?

The NVMFS2D3P04M8LT1G MOSFET is supplied in an 8-PowerTDFN, 5-Lead package, specifically a 5-DFN (5x6) (8-SOFL) configuration.

Is the NVMFS2D3P04M8LT1G RoHS compliant?

The NVMFS2D3P04M8LT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFS2D3P04M8LT1G?

The Moisture Sensitivity Level (MSL) for the NVMFS2D3P04M8LT1G is Level 1.

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