NVMFS025P04M8LT1G The On Semiconductor NVMFS025P04M8LT1G is a P-Channel MOSFET designed for power applications. It offers a -40V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVMFS025P04M8LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFS025P04M8LT1G is a P-Channel MOSFET designed for power applications. It offers a -40V drain-to-source voltage and low on-resistance.
✓ Total Stock: 9,500 pcs
$ Price Range: $0.99

NVMFS025P04M8LT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFS025P04M8LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFS025P04M8LT1G Description

Short technical summary and product information.

The NVMFS025P04M8LT1G from On Semiconductor is a P-Channel MOSFET designed for efficient power management. This device features a drain-to-source voltage of -40V and a maximum continuous drain current of -34.6A at 25°C case temperature.

 

With a low on-resistance of 23mOhm at 15A and 10Vgs, it minimizes conduction losses. The MOSFET also boasts low input capacitance and gate charge, reducing driver losses. It operates within a wide temperature range of -55°C to +175°C.

 

The NVMFS025P04M8LT1G is housed in a compact 5x6mm, 8-lead DFN (SO-8FL) package with surface mount capability. This small footprint is ideal for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

 

Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2.4V at 255µA. The device is Pb-free and RoHS compliant.

NVMFS025P04M8LT1G Quick Information

Product Type: MOSFET
Series: MV8
Canonical Name: NVMFS025P04M8LT1G P-Channel MOSFET
Subcategory: Single

NVMFS025P04M8LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFS025P04M8LT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFS025P04M8LT1G Features

  • P-Channel MOSFET for power applications.
  • -40V drain-to-source voltage rating.
  • Low 23mOhm Rds(on) at 15A.
  • Compact 5x6mm DFN package.
  • AEC-Q101 qualified for automotive use.

NVMFS025P04M8LT1G Applications

  • Ideal for power switching circuits.
  • Suitable for automotive applications.
  • Used in compact electronic designs.
  • Efficient conduction loss reduction.

NVMFS025P04M8LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFS025P04M8LT1G?

The drain-to-source voltage (Vdss) is -40 V.

What is the maximum continuous drain current for the NVMFS025P04M8LT1G?

The maximum continuous drain current is -34.6 A at a case temperature of 25°C and -9.4 A at an ambient temperature of 25°C.

What is the on-resistance of the NVMFS025P04M8LT1G?

The maximum on-resistance (Rds On) is 23mOhm when the drain current is 15A and the gate-to-source voltage is 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMFS025P04M8LT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) with surface mount capability.

Is the NVMFS025P04M8LT1G RoHS compliant?

Yes, the device is Pb-free and RoHS compliant.

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