| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFD6H852NLWFT1G from On Semiconductor is a Dual N-Channel Power MOSFET designed for compact applications. It features a small footprint measuring 5x6 mm, making it suitable for space-constrained designs.
This MOSFET boasts a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 25A at a case temperature of 25°C. Its low on-state resistance (Rds(on)) of 25.5 mOhm at 10V gate-source voltage minimizes conduction losses. The device also offers low gate charge (Qg) and capacitance, reducing driver losses.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 26µA and an input capacitance (Ciss) of 521 pF at 40V. The operating temperature range is from -55°C to 175°C.
Packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface-mount configuration, the NVMFD6H852NLWFT1G is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVMFD6H852NLWFT1G is 80V.
The continuous drain current is 7A when measured at the ambient temperature (Ta) and 25A when measured at the case temperature (Tc).
The on-state resistance (Rds(on)) is a maximum of 25.5mOhm at 10A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
This MOSFET is supplied in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, suitable for surface mounting.
Yes, the NVMFD6H852NLWFT1G is RoHS3 Compliant.