NVMFD6H852NLT1G The ON Semiconductor NVMFD6H852NLT1G is a Dual N-Channel Power MOSFET featuring an 80V drain-to-source voltage and low Rds(on). It is housed in a compact 8-DFN package.
Mfr Part #:

NVMFD6H852NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFD6H852NLT1G is a Dual N-Channel Power MOSFET featuring an 80V drain-to-source voltage and low Rds(on). It is housed in a compact 8-DFN package.
✓ Total Stock: 24,000 pcs
$ Price Range: $0.99

NVMFD6H852NLT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFD6H852NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMFD6H852NLT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFD6H852NLT1G is a Dual N-Channel Power MOSFET designed for applications requiring efficient power management in a small footprint. It offers a drain-to-source voltage of 80V and a low on-resistance of 25.5 mOhm at 10V gate-to-source voltage, minimizing conduction losses.

 

This MOSFET supports continuous drain currents of 7A at ambient temperature and 25A at case temperature. Its features include low gate charge (Qg) and capacitance, contributing to reduced driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-DFN (5x6 mm) dual flag configuration, the NVMFD6H852NLT1G is suitable for surface mounting and compact designs. It is AEC-Q101 qualified and RoHS compliant, making it a reliable choice for various automotive and industrial applications.

NVMFD6H852NLT1G Quick Information

Product Type: Power MOSFET
Canonical Name: Dual N-Channel Power MOSFET
Subcategory: N-Channel

NVMFD6H852NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFD6H852NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD6H852NLT1G Features

  • 80V drain-to-source voltage rating.
  • Low 25.5mOhm Rds(on) at 10V Vgs.
  • 7A ambient and 25A case current.
  • Compact 8-DFN (5x6mm) package.
  • AEC-Q101 Qualified.

NVMFD6H852NLT1G Applications

  • Suitable for compact power designs.
  • Minimizes conduction losses.
  • Reduces driver losses.
  • Automotive applications.
  • Industrial power systems.

NVMFD6H852NLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMFD6H852NLT1G?

The drain-to-source voltage is 80V.

What is the maximum on-resistance of the NVMFD6H852NLT1G?

The maximum on-resistance is 25.5mOhm at 10A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 7A at ambient temperature and 25A at case temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the NVMFD6H852NLT1G in?

It is in an 8-DFN (5x6mm) Dual Flag (SO8FL-Dual) package, suitable for surface mounting.

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