| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
733,500 pcs
|
733500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
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| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVMFD5C674NLT1G is a dual N-channel MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage of 60V and a continuous drain current of 42A at 25°C. The device is designed for high-current switching and power management applications. It comes in an 8-DFN (5x6) dual flag package suitable for surface mounting. The MOSFET has a maximum Rds On of 14.4mOhm at 10A and 10V Vgs, with a gate threshold voltage of 2.2V at 25µA. It operates over a temperature range from -55°C to 175°C and has thermal resistances of 2.86°C/W junction-to-case and 49°C/W junction-to-ambient. The device is RoHS3 compliant, Pb-free, and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 42A.
It comes in an 8-DFN (5x6) dual flag package.
-55°C to 175°C.
Yes, it is RoHS3 compliant.