BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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10,500 pcs
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10500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,312 pcs
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1312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVMFD5C668NLT1G from On Semiconductor is a Dual N-Channel Power MOSFET. This component is designed with a small footprint, measuring 5x6 mm, making it suitable for compact designs. It features low on-resistance (RDS(on)) to minimize conduction losses and low gate charge (QG) and capacitance to reduce driver losses.
The MOSFET has a maximum drain-to-source voltage (VDSS) of 60V. It can handle a continuous drain current (ID) of up to 68A at 25°C case temperature and 48A at 100°C case temperature. Power dissipation is rated at 57.5W at 25°C case temperature and 29W at 100°C case temperature. When mounted on a standard FR4 board, the continuous drain current is 15.5A at 25°C ambient temperature and 11A at 100°C ambient temperature, with power dissipation of 3.0W and 1.5W respectively.
Key electrical characteristics include a low RDS(on) of 6.5 mΩ at 10V gate-source voltage and 9.2 mΩ at 4.5V gate-source voltage. The operating junction and storage temperature range is from -55°C to +175°C. The device is AEC-Q101 qualified and PPAP capable, indicating suitability for automotive applications. It is also Pb-Free and RoHS compliant.
The NVMFD5C668NLT1G is available in a DFN8 5x6 package, designed for surface mounting. The thermal resistance from junction to case is 2.6 °C/W, and junction to ambient is 50.26 °C/W when mounted on a 650 mm² FR4 board with 2 oz. Cu pad.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage for the NVMFD5C668NLT1G is 60 V.
The continuous drain current is 68 A at TC = 25°C and 48 A at TC = 100°C.
The operating junction and storage temperature range is −55 to +175 °C.
The NVMFD5C668NLT1G comes in a DFN8 5x6 package.
The maximum power dissipation is 57.5 W at TC = 25°C and 29 W at TC = 100°C.
The maximum Gate-to-Source Voltage is ±20 V.
The maximum RDS(on) at VGS=10V and ID=30A is 6.5 mΩ.