NVMFD5C650NLT1G The NVMFD5C650NLT1G is a Dual N-Channel Power MOSFET from On Semiconductor. It features a 60V drain-source voltage and a continuous drain current of 111A at case temperature.
Mfr Part #:

NVMFD5C650NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFD5C650NLT1G is a Dual N-Channel Power MOSFET from On Semiconductor. It features a 60V drain-source voltage and a continuous drain current of 111A at case temperature.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVMFD5C650NLT1G Available from 1 distributor

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✓ Non-Authorised
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NVMFD5C650NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVMFD5C650NLT1G Description

Short technical summary and product information.

The NVMFD5C650NLT1G is a Dual N-Channel Power MOSFET manufactured by On Semiconductor. This device is designed for power management applications, offering a 60V drain-to-source voltage and a high continuous drain current capability of 111A when measured at the case temperature (21A at ambient temperature).

 

Key electrical characteristics include a low on-resistance of 4.2 mOhm at 20A and 10V, and a gate charge of 16nC at 4.5V. The MOSFET operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface-mount package, the NVMFD5C650NLT1G is suitable for compact designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. The device is also Pb-Free and RoHS Compliant.

 

With its robust specifications, including a low Rds(on) to minimize conduction losses and low QG and capacitance to minimize driver losses, the NVMFD5C650NLT1G is well-suited for various power switching and control applications.

NVMFD5C650NLT1G Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel Power MOSFET
Subcategory: Dual N-Channel

NVMFD5C650NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFD5C650NLT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD5C650NLT1G Features

  • Dual N-Channel MOSFET configuration.
  • 60V drain-to-source voltage rating.
  • 111A continuous drain current (Tc).
  • Low 4.2mOhm Rds(on) at 20A.
  • Compact 8-DFN (5x6) surface mount package.

NVMFD5C650NLT1G Applications

  • Suitable for compact power designs.
  • Used in automotive applications.
  • Minimizes conduction losses.
  • Reduces driver power requirements.

NVMFD5C650NLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFD5C650NLT1G?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current for the NVMFD5C650NLT1G?

The maximum continuous drain current is 111A at case temperature and 21A at ambient temperature.

What is the on-resistance (Rds On) of the NVMFD5C650NLT1G?

The Rds On is a maximum of 4.2mOhm at 20A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMFD5C650NLT1G in?

It is in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, designed for surface mounting.

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