| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,950 pcs
|
14950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVMFD5C478NT1G from On Semiconductor is a dual N-Channel MOSFET array designed for power management applications. It features a 40V drain-to-source voltage (VDSS) and a low Rds(on) of 17mOhm at 7.5A and 10V gate-source voltage, minimizing conduction losses.
This MOSFET array is suitable for designs requiring efficient power switching, with a continuous drain current rating of 27A at 25°C case temperature and 9.8A at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +175°C.
The device comes in an 8-PowerTDFN package with a 5x6mm footprint, ideal for space-constrained designs. It supports surface mount technology for automated assembly. The MOSFET array is AEC-Q101 qualified and RoHS compliant, indicating suitability for automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.98 | $1.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The Rds(on) is a maximum of 17mOhm at 7.5A and 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.