| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Military Grade | |
| SVHC Present |
The ON Semiconductor NVMFD5C462NLWFT1G is a dual N-channel MOSFET with an enhancement mode channel. It is AEC-Q100 qualified, indicating suitability for automotive and demanding applications.
Key electrical specifications include a drain-source breakdown voltage of 40V and a continuous drain current of 84A. The on-resistance (Rds On) is rated at 3.9 mOhms, and the gate-source threshold voltage is 1.2V. The device operates within a temperature range of -55°C to +175°C and has a power dissipation of 50W.
This MOSFET is housed in a DFN-8 surface-mount package. It is supplied in cut tape packaging with a factory pack quantity of 1500 units. The typical turn-on delay is 11ns, and the typical turn-off delay is 19ns, with rise and fall times of 16ns and 6ns respectively. The gate charge is 23nC.
This component is suitable for various power switching and control applications where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 84 A.
The drain-source breakdown voltage is 40 V.
The Rds On is 3.9 mOhms.
The operating temperature range is -55°C to +175°C.
The package type is DFN-8.
The RoHS status is RoHS3 Compliant.