| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVMFD5C446NT1G from On Semiconductor is a Dual N-Channel Power MOSFET featuring a 40V drain-to-source voltage rating and a low on-resistance of 2.9mOhm at 30A and 10V Vgs. This device is designed for applications requiring minimal conduction losses, with a continuous drain current of up to 127A at 25°C case temperature.
Key electrical characteristics include a gate threshold voltage of 3.5V maximum and a gate charge of 38nC maximum. The MOSFET operates within a wide temperature range of -55°C to 175°C. Its small footprint, measuring 5x6 mm, makes it suitable for compact designs.
The NVMFD5C446NT1G is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package and is designed for surface mounting. It boasts AEC-Q101 qualification and PPAP capability, indicating its suitability for demanding automotive and industrial applications. The device is also Pb-Free and RoHS compliant.
With a power dissipation of 89W at 25°C case temperature and 3.2W at 25°C ambient temperature, this MOSFET is engineered for efficient power management. Its low QG and capacitance contribute to minimizing driver losses in power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVMFD5C446NT1G is 40V.
The maximum continuous drain current is 127A at 25°C case temperature and 24A at 25°C ambient temperature.
The on-resistance (Rds On) is a maximum of 2.9mOhm at 30A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
Yes, the device is RoHS3 Compliant.
The package type is 8-DFN (5x6) Dual Flag (SO8FL-Dual) and it is surface mounted.