NVMFD5853NLT1G The ON Semiconductor NVMFD5853NLT1G is a dual N-channel logic level power MOSFET. It offers a 40V drain-to-source voltage and a low Rds(on) of 10mOhm.
Mfr Part #:

NVMFD5853NLT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFD5853NLT1G is a dual N-channel logic level power MOSFET. It offers a 40V drain-to-source voltage and a low Rds(on) of 10mOhm.
✓ Total Stock: 55,392 pcs
$ Price Range: $0.99

NVMFD5853NLT1G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
53,100 pcs
53100 pcs On Request 1 On Request On Request 2017 On Request On Request
Non-Authorised Inventory information
1,500 pcs
1500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
792 pcs
792 pcs On Request 1 On Request On Request 1314+ On Request On Request

NVMFD5853NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVMFD5853NLT1G Description

Short technical summary and product information.

The NVMFD5853NLT1G from ON Semiconductor is a dual N-channel logic level power MOSFET designed for compact applications. It features a drain-to-source voltage of 40V and a low on-resistance (Rds(on)) of 10mOhm at 15A and 10V, minimizing conduction losses.

 

This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in an 8-PowerTDFN package with a surface mount type, suitable for space-constrained designs. The device offers a continuous drain current of up to 12A at 25°C ambient temperature and 34A at 25°C case temperature.

 

Key electrical characteristics include an input capacitance of 1100pF at 25V and a gate charge of 23nC at 10V. The logic level gate feature ensures compatibility with lower gate drive voltages. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.

NVMFD5853NLT1G Quick Information

Product Type: Power MOSFET
Canonical Name: NVMFD5853NLT1G Dual N-Channel Logic Level Power MOSFET
Subcategory: Dual N-Channel

NVMFD5853NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMFD5853NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD5853NLT1G Features

  • 40V Drain-to-Source Voltage.
  • Low 10mOhm Rds(on) at 15A.
  • Dual N-Channel Logic Level MOSFET.
  • Compact 8-DFN (SO8FL-Dual) package.
  • AEC-Q101 Qualified.

NVMFD5853NLT1G Applications

  • Used in power switching circuits
  • Suitable for load management applications
  • Ideal for compact power modules
  • Applicable in automotive and industrial controls

NVMFD5853NLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFD5853NLT1G?

The maximum drain-to-source voltage is 40V.

What is the typical Rds(on) for the NVMFD5853NLT1G?

The Rds(on) is a maximum of 10mOhm at 15A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the NVMFD5853NLT1G in?

It is in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) type.

Is the NVMFD5853NLT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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