| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=100 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tmb = 100 °C) | |
| Continuous Drain Current (Maximum @ Tmb = 25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction-to-Mounting Board (top) Thermal Resistance | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Junction and Storage Temperature | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Ta = 100 °C) | |
| Power Dissipation (Maximum @ Tmb = 100 °C) | |
| Power Dissipation (Maximum @ Tmb=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Rds On Max (Maximum @ 20 A, 10 V) | |
| Rds On Max (Maximum @ 20 A, 4.5 V) | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVMFD5852NLT1G from ON Semiconductor is a high-performance Dual N-Channel Power MOSFET designed for compact applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current of up to 15A (TA = 25°C) or 44A (Tmb = 25°C). The MOSFET boasts a low on-resistance (Rds(on)) of 6.9 mOhm at 20A and 10V, minimizing conduction losses.
This device features a logic-level gate, making it suitable for direct drive from microcontrollers. It operates within a wide temperature range of -55°C to 175°C. The NVMFD5852NLT1G is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.
Packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface-mount package, it is designed for space-constrained PCBs. The small footprint (5x6 mm) and low profile are ideal for compact designs. The wettable flanks option (NVMFD5852NLWF) is available for enhanced optical inspection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current is 15A at an ambient temperature of 25°C.
The Rds(on) is a maximum of 6.9mOhm at 20A and 10V.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) surface mount package.
Yes, the NVMFD5852NLT1G is AEC-Q101 qualified and PPAP capable.