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NVMFD5485NLT3G The On Semiconductor NVMFD5485NLT3G is a dual N-channel MOSFET designed for compact applications. It offers a 60V drain-source voltage and a continuous drain current of 5.3A.
Mfr Part #:

NVMFD5485NLT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMFD5485NLT3G is a dual N-channel MOSFET designed for compact applications. It offers a 60V drain-source voltage and a continuous drain current of 5.3A.
✓ Total Stock: 700 pcs
$ Price Range: $0.99

NVMFD5485NLT3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
700 pcs
On Request
700 pcs On Request 1 On Request On Request 15 On Request On Request
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NVMFD5485NLT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
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NVMFD5485NLT3G Description

Short technical summary and product information.

The NVMFD5485NLT3G from On Semiconductor is a dual N-channel power MOSFET. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 5.3A at 25°C ambient temperature. The MOSFET exhibits a low Rds(on) of 44mOhm at 15A and 10Vgs, minimizing conduction losses. Its gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA, and it operates with a logic level gate.

 

This device is constructed using MOSFET technology and is configured as two N-channel transistors. It has an input capacitance (Ciss) of 560pF at 25V and a gate charge (Qg) of 20nC at 10V. The power dissipation is rated at 2.9W at 25°C ambient temperature.

 

The NVMFD5485NLT3G is housed in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) type. It is designed for surface mounting, making it suitable for compact designs. The operating temperature range is from -55°C to 175°C (TJ).

NVMFD5485NLT3G Quick Information

Product Type: MOSFET
Canonical Name: NVMFD5485NL Dual N-Channel MOSFET
Subcategory: Dual N-Channel

NVMFD5485NLT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFD5485NLT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD5485NLT3G Features

  • Dual N-Channel MOSFET configuration.
  • 60V drain-to-source voltage rating.
  • Low 44mOhm Rds(on) at 15A, 10Vgs.
  • Logic Level Gate operation.
  • Compact 8-DFN (5x6) surface mount package.

NVMFD5485NLT3G Applications

  • Suitable for compact power designs.
  • Efficient switching applications.
  • Power management circuits.
  • Low conduction loss designs.

NVMFD5485NLT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMFD5485NLT3G?

The drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current for the NVMFD5485NLT3G?

The continuous drain current is 5.3A at 25°C ambient temperature.

What is the Rds On for the NVMFD5485NLT3G?

The Rds On is a maximum of 44mOhm at 15A drain current and 10V gate-source voltage.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMFD5485NLT3G supplied in?

It is supplied in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) type.

Is the NVMFD5485NLT3G RoHS compliant?

Yes, the NVMFD5485NLT3G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFD5485NLT3G?

The Moisture Sensitivity Level is 1.

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