| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVMFD5483NLWFT3G from On Semiconductor is a power MOSFET featuring a dual N-channel configuration. It is designed with a small footprint (5x6 mm) suitable for compact designs, minimizing conduction losses with its low Rds(on) of 36mOhm at 15A and 10V.
This MOSFET operates with a drain-to-source voltage of 60V and handles a continuous drain current of 6.4A at 25°C ambient temperature. It features a logic-level gate, making it compatible with lower gate drive voltages. The operating temperature range is -55°C to 175°C.
Packaged in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) format, it is designed for surface mounting. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also a Pb-Free device, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The Rds(on) is a maximum of 36mOhm at a drain current of 15A and gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) format.
The device is listed as RoHS3 Compliant.
The Moisture Sensitivity Level is 1.