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NVMFD016N06CT1G The ON Semiconductor NVMFD016N06CT1G is a dual N-channel MOSFET with a 60V drain-to-source voltage rating. It features a low on-resistance of 16.3mOhm at 5A and 10V.
Mfr Part #:

NVMFD016N06CT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMFD016N06CT1G is a dual N-channel MOSFET with a 60V drain-to-source voltage rating. It features a low on-resistance of 16.3mOhm at 5A and 10V.
✓ Total Stock: 4,500 pcs
$ Price Range: $0.99

NVMFD016N06CT1G Available from 1 distributor

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✓ Non-Authorised
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4,500 pcs
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NVMFD016N06CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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NVMFD016N06CT1G Description

Short technical summary and product information.

The ON Semiconductor NVMFD016N06CT1G is a dual N-channel MOSFET designed for various applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current of up to 9A at ambient temperature (Ta) and 32A at case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 16.3mOhm at 5A and 10V, and a gate charge (Qg) of 6.9nC at 10V. The input capacitance (Ciss) is rated at 489pF at 30V, and the gate threshold voltage (Vgs(th)) is a maximum of 4V at 25µA.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN package with a surface mount type. The package is specified as 8-DFN (5x6) Dual Flag (SO8FL-Dual).

 

Compliance includes RoHS3, MSL 1 Unlimited, and REACH Unaffected. The part is suitable for applications requiring efficient power switching and management.

NVMFD016N06CT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFD016N06CT1G
Subcategory: Arrays

NVMFD016N06CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFD016N06CT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD016N06CT1G Features

  • Dual N-channel MOSFET configuration.
  • 60V drain-to-source voltage rating.
  • Low 16.3mOhm maximum on-resistance.
  • Surface mount 8-PowerTDFN package.
  • Wide operating temperature range.

NVMFD016N06CT1G Applications

  • Suitable for power switching circuits.
  • Efficient for voltage regulation tasks.
  • Used in power management modules.
  • Ideal for high-current applications.

NVMFD016N06CT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMFD016N06CT1G?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9A at ambient temperature (Ta) and 32A at case temperature (Tc).

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 16.3mOhm when measured at 5A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVMFD016N06CT1G in?

It is in an 8-PowerTDFN package, specifically the 8-DFN (5x6) Dual Flag (SO8FL-Dual) variant, for surface mounting.

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