| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVLJWS013N03CLTAG, is designed for power applications requiring efficient switching. It offers a drain-to-source voltage (Vdss) of 30V and a low on-resistance (Rds On) of 13mOhm at 8A and 10V gate drive, minimizing conduction losses.
The device supports a continuous drain current of up to 10A at ambient temperature and 35A at case temperature, with a maximum power dissipation of 2.4W (Ta) and 27W (Tc). The operating temperature range is -55°C to 175°C (TJ).
Packaged in a 6-WDFNW (2.05x2.05) surface mountable package, this MOSFET is suitable for compact designs. It features a gate threshold voltage (Vgs(th)) of 2V at 250µA and a gate-to-source voltage (Vgs) maximum of ±20V. The input capacitance (Ciss) is 600pF at 15V, and the gate charge (Qg) is 10nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum on-resistance is 13mOhm at 8A drain current and 10V gate-to-source voltage.
The continuous drain current is 10A at ambient temperature and 35A at case temperature.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a 6-WDFNW (2.05x2.05) package and is surface mountable.
The gate threshold voltage is a maximum of 2V at 250µA drain current.
The input capacitance (Ciss) is a maximum of 600pF at 15V drain-to-source voltage.