NVJD5121NT1G The NVJD5121NT1G is a dual N-channel MOSFET from On Semiconductor with a 60V drain-to-source voltage and 295mA continuous drain current. It features low RDS(on) and ESD protection.
Mfr Part #:

NVJD5121NT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVJD5121NT1G is a dual N-channel MOSFET from On Semiconductor with a 60V drain-to-source voltage and 295mA continuous drain current. It features low RDS(on) and ESD protection.
✓ Total Stock: 23,643 pcs
$ Price Range: $0.99

NVJD5121NT1G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

NVJD5121NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NVJD5121NT1G Description

Short technical summary and product information.

The NVJD5121NT1G is a dual N-channel MOSFET manufactured by On Semiconductor. This device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 295mA at 25°C. It is designed with low RDS(on) and a low gate threshold voltage, making it suitable for various applications.

 

The MOSFET features ESD protection on the gate, enhancing its robustness. It operates within a temperature range of -55°C to 150°C. The device is available in an SC-88/SC70-6/SOT-363 surface-mount package.

 

Key electrical characteristics include a maximum Rds(on) of 1.6 Ohm at 500mA and 10V, and a gate threshold voltage (Vgs(th)) maximum of 2.5V at 250µA. Input capacitance (Ciss) is 26pF at 20V, and gate charge (Qg) is 0.9nC at 4.5V.

 

Applications for the NVJD5121NT1G include low-side load switching and DC-DC converters (buck and boost circuits). The NVJD prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

NVJD5121NT1G Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel MOSFET with ESD Protection
Subcategory: Dual N-Channel

NVJD5121NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free Device

NVJD5121NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVJD5121NT1G Features

  • Dual N-Channel MOSFET with ESD protection.
  • 60V Drain-to-Source Voltage rating.
  • 295mA Continuous Drain Current.
  • Low RDS(on) and Gate Threshold.
  • Surface mount SC-88 package.

NVJD5121NT1G Applications

  • Used in power switching circuits
  • Suitable for load control applications
  • Ideal for high-speed switching
  • Applicable in load management systems

NVJD5121NT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVJD5121NT1G?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current of the NVJD5121NT1G at 25°C?

The continuous drain current (Id) is 295mA at 25°C in steady state.

What is the maximum Rds(on) for the NVJD5121NT1G?

The maximum Rds(on) is 1.6 Ohm at 500mA and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NVJD5121NT1G supplied in?

The NVJD5121NT1G is supplied in an SC-88/SC70-6/SOT-363 package for surface mounting.

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