| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,598 pcs
|
2598 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,025 pcs
|
2025 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVJD5121NT1G is a dual N-channel MOSFET manufactured by On Semiconductor. This device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 295mA at 25°C. It is designed with low RDS(on) and a low gate threshold voltage, making it suitable for various applications.
The MOSFET features ESD protection on the gate, enhancing its robustness. It operates within a temperature range of -55°C to 150°C. The device is available in an SC-88/SC70-6/SOT-363 surface-mount package.
Key electrical characteristics include a maximum Rds(on) of 1.6 Ohm at 500mA and 10V, and a gate threshold voltage (Vgs(th)) maximum of 2.5V at 250µA. Input capacitance (Ciss) is 26pF at 20V, and gate charge (Qg) is 0.9nC at 4.5V.
Applications for the NVJD5121NT1G include low-side load switching and DC-DC converters (buck and boost circuits). The NVJD prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 295mA at 25°C in steady state.
The maximum Rds(on) is 1.6 Ohm at 500mA and 10V.
The operating junction and storage temperature range is -55°C to 150°C.
The NVJD5121NT1G is supplied in an SC-88/SC70-6/SOT-363 package for surface mounting.