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NVJD4401NT1G The ON Semiconductor NVJD4401NT1G is a dual N-channel MOSFET designed for load power switching. It offers a 20V drain-to-source voltage and a continuous drain current of 630mA.
Mfr Part #:

NVJD4401NT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVJD4401NT1G is a dual N-channel MOSFET designed for load power switching. It offers a 20V drain-to-source voltage and a continuous drain current of 630mA.
✓ Total Stock: 14,040 pcs
$ Price Range: $0.99

NVJD4401NT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Eito Shoji ✓
Non-Authorised Inventory information
7,020 pcs
On Request
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,020 pcs
On Request
7020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NVJD4401NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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NVJD4401NT1G Description

Short technical summary and product information.

The NVJD4401NT1G from ON Semiconductor is a dual N-channel MOSFET suitable for various applications including load power switching and DC-DC conversion. It features a small footprint SC-88 package, making it ideal for space-constrained designs.

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V and a continuous drain current of up to 630mA at 25°C (based on R/C0113JA). The device offers a low gate charge and ESD protected gate. The Rds(on) is specified at a maximum of 375mOhm at 630mA and 4.5V Vgs.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in a 6-TSSOP, SC-88, SOT-363 package and is surface-mounted. The device is Pb-Free and RoHS Compliant.

 

Applications include Li-Ion battery supplied devices, cell phones, media players, digital cameras, and PDAs.

NVJD4401NT1G Quick Information

Product Type: MOSFET
Canonical Name: NVJD4401NT1G Dual N-Channel MOSFET
Subcategory: Dual N-Channel

NVJD4401NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVJD4401NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVJD4401NT1G Features

  • Dual N-Channel MOSFET configuration.
  • 20V drain-to-source voltage rating.
  • 630mA continuous drain current.
  • Small SC-88 package for surface mounting.
  • Logic Level Gate and ESD protection.

NVJD4401NT1G Applications

  • Suitable for load power switching.
  • Ideal for Li-Ion battery devices.
  • Used in cell phones and media players.
  • Applicable for DC-DC conversion.

NVJD4401NT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVJD4401NT1G?

The drain-to-source voltage (Vdss) for the NVJD4401NT1G is 20V.

What is the continuous drain current of the NVJD4401NT1G?

The continuous drain current is 630mA at 25°C (based on R/C0113JA).

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NVJD4401NT1G supplied in?

The NVJD4401NT1G is supplied in an SC-88/SC70-6/SOT-363 package.

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