NVHL080N120SC1 The ON Semiconductor NVHL080N120SC1 is an N-Channel Silicon Carbide MOSFET designed for high-voltage applications. It offers a 1200V drain-source voltage and a low on-resistance.
Mfr Part #:

NVHL080N120SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVHL080N120SC1 is an N-Channel Silicon Carbide MOSFET designed for high-voltage applications. It offers a 1200V drain-source voltage and a low on-resistance.
✓ Total Stock: 55,393 pcs
$ Price Range: $0.99

NVHL080N120SC1 Available from 1 distributor

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NVHL080N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVHL080N120SC1 Description

Short technical summary and product information.

This NVHL080N120SC1 is an N-Channel Silicon Carbide (SiC) MOSFET from ON Semiconductor, rated for a maximum drain-source voltage of 1200V. It features a typical on-resistance of 80 mOhm at 20A and 20V, with a continuous drain current capability of 44A at 25°C case temperature.

 

The device is constructed using SiC technology, offering advantages in high-temperature performance and efficiency. It has a low gate charge (typ. 56 nC) and low output capacitance (typ. 80 pF), contributing to faster switching speeds.

 

Packaged in a TO-247-3L through-hole package, this MOSFET is suitable for demanding applications. The operating junction temperature range is from -55°C to +175°C, and it has a junction-to-case thermal resistance of 0.84 °C/W.

 

Typical applications include automotive on-board chargers and DC-DC converters for electric and hybrid vehicles. The device is AEC-Q101 qualified and RoHS compliant.

NVHL080N120SC1 Quick Information

Product Type: MOSFET
Canonical Name: NVHL080N120SC1 N-Channel Silicon Carbide MOSFET
Subcategory: N-Channel

NVHL080N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free 2LI

NVHL080N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVHL080N120SC1 Features

  • 1200V drain-source voltage rating.
  • 80 mOhm typical on-resistance.
  • 44A continuous drain current.
  • N-Channel SiC MOSFET technology.
  • TO-247-3L through-hole package.

NVHL080N120SC1 Applications

  • Automotive on-board chargers.
  • Automotive DC-DC converters.
  • Electric vehicle power systems.
  • Hybrid vehicle power systems.

NVHL080N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVHL080N120SC1?

The maximum drain-source voltage (Vdss) is 1200 V.

What is the typical on-resistance of the NVHL080N120SC1?

The typical on-resistance (RDS(on)) is 80 mOhm.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 31 A.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVHL080N120SC1 supplied in?

The device is supplied in a TO-247-3L package.

Is the NVHL080N120SC1 RoHS compliant?

Yes, the NVHL080N120SC1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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