| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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55,393 pcs
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55393 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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This NVHL080N120SC1 is an N-Channel Silicon Carbide (SiC) MOSFET from ON Semiconductor, rated for a maximum drain-source voltage of 1200V. It features a typical on-resistance of 80 mOhm at 20A and 20V, with a continuous drain current capability of 44A at 25°C case temperature.
The device is constructed using SiC technology, offering advantages in high-temperature performance and efficiency. It has a low gate charge (typ. 56 nC) and low output capacitance (typ. 80 pF), contributing to faster switching speeds.
Packaged in a TO-247-3L through-hole package, this MOSFET is suitable for demanding applications. The operating junction temperature range is from -55°C to +175°C, and it has a junction-to-case thermal resistance of 0.84 °C/W.
Typical applications include automotive on-board chargers and DC-DC converters for electric and hybrid vehicles. The device is AEC-Q101 qualified and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1200 V.
The typical on-resistance (RDS(on)) is 80 mOhm.
The continuous drain current (Id) at 25°C is 31 A.
The operating junction and storage temperature range is -55°C to +175°C.
The device is supplied in a TO-247-3L package.
Yes, the NVHL080N120SC1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.