| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVHL072N65S3 from On Semiconductor is a SuperFET III N-Channel MOSFET utilizing charge balance technology for low on-resistance and reduced gate charge. This device is rated for 650V drain-to-source voltage and can handle a continuous drain current of 44A at 25°C case temperature. Its typical on-resistance is 72mΩ at 22A and 10V gate-source voltage.
Designed for automotive applications such as PHEV-BEV DC-DC converters and onboard chargers, the NVHL072N65S3 offers superior switching performance and can withstand extreme dv/dt rates. The Easy-drive series helps manage EMI issues and simplifies design implementation. It operates within a temperature range of -55°C to 150°C and is housed in a TO-247-3 package suitable for through-hole mounting.
Key electrical characteristics include a gate charge of 82nC at 10V and an input capacitance of 3300pF at 400V. The maximum power dissipation is 312W at 25°C case temperature. This MOSFET is AEC-Q101 qualified and is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V.
The continuous drain current is 44A at 25°C case temperature.
The typical on-resistance is 72mΩ at 22A drain current and 10V gate-source voltage.
The package type is TO-247-3.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the NVHL072N65S3 is RoHS3 compliant.