NVHL060N090SC1 The ON Semiconductor NVHL060N090SC1 is an N-Channel SiCFET MOSFET with a 900V drain-source voltage rating. It features a low on-resistance of 84mOhm at 20A, 15V and is packaged in a TO-247-3 through-hole configuration.
Mfr Part #:

NVHL060N090SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVHL060N090SC1 is an N-Channel SiCFET MOSFET with a 900V drain-source voltage rating. It features a low on-resistance of 84mOhm at 20A, 15V and is packaged in a TO-247-3 through-hole configuration.
✓ Total Stock: 59,400 pcs
$ Price Range: $0.99

NVHL060N090SC1 Available from 1 distributor

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NVHL060N090SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVHL060N090SC1 Description

Short technical summary and product information.

This ON Semiconductor NVHL060N090SC1 is a high-performance N-Channel Silicon Carbide Field Effect Transistor (SiCFET) MOSFET designed for demanding applications. It offers a robust 900V drain-to-source voltage (Vdss) and can handle continuous currents up to 46A at case temperature.

 

The MOSFET exhibits a low on-resistance (Rds On) of 84mOhm, measured at 20A drain current and 15V gate-source voltage, minimizing conduction losses. The gate threshold voltage (Vgs(th)) is a maximum of 4.3V at 5mA, and the device supports gate drive voltages up to 15V.

 

With a maximum power dissipation of 221W at case temperature, this component is suitable for high-power applications. It operates within a wide temperature range of -55°C to 175°C (TJ). The device is housed in a TO-247-3 package and features through-hole mounting.

 

Key electrical characteristics include an input capacitance (Ciss) of 1770pF at 450V and a gate charge (Qg) of 87nC at 15V. The gate-source voltage limits are +19V and -10V.

NVHL060N090SC1 Quick Information

Product Type: MOSFET
Series: NVHL060N090SC1
Canonical Name: On Semiconductor NVHL060N090SC1 N-Channel SiCFET
Subcategory: N-Channel

NVHL060N090SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVHL060N090SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVHL060N090SC1 Features

  • 900V drain-source voltage rating.
  • 46A continuous current capability.
  • Low 84mOhm on-resistance.
  • TO-247-3 through-hole package.
  • Silicon Carbide FET technology.

NVHL060N090SC1 Applications

  • Suitable for high-power switching.
  • Ideal for power supply designs.
  • Used in motor control circuits.
  • Applicable in energy conversion systems.

NVHL060N090SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVHL060N090SC1?

The maximum drain-source voltage (Vdss) is 900V.

What is the continuous current rating of the NVHL060N090SC1?

The continuous current rating is 46A at case temperature.

What is the on-resistance of the NVHL060N090SC1?

The on-resistance (Rds On) is a maximum of 84mOhm at 20A drain current and 15V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVHL060N090SC1 in?

It is supplied in a TO-247-3 package.

How is the NVHL060N090SC1 mounted?

The mounting type is through hole.

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