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NVHL040N120SC1 The ON Semiconductor NVHL040N120SC1 is a Silicon Carbide N-Channel MOSFET with a 1200V drain-to-source voltage and 60A continuous current rating. It comes in a TO-247-3 package.
Mfr Part #:

NVHL040N120SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVHL040N120SC1 is a Silicon Carbide N-Channel MOSFET with a 1200V drain-to-source voltage and 60A continuous current rating. It comes in a TO-247-3 package.
✓ Total Stock: 2,250 pcs
$ Price Range: $17.02

NVHL040N120SC1 Available from 1 distributor

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✓ Non-Authorised
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2,250 pcs
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NVHL040N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rds On (Typ)
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVHL040N120SC1 Description

Short technical summary and product information.

The NVHL040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET manufactured by ON Semiconductor. It offers a high drain-to-source voltage (Vds) of 1200V and a continuous drain current (Id) of 60A at 25°C case temperature, with a maximum power dissipation of 348W.

 

Key electrical characteristics include a low typical on-resistance (Rds(on)) of 40 mΩ at 35A and 20V gate-to-source voltage, a typical gate charge (Qg) of 106 nC, and a typical output capacitance (Coss) of 140 pF. The device operates over a wide temperature range from -55°C to 175°C.

 

This MOSFET is designed for demanding applications such as automotive on-board chargers and DC-DC converters for electric and hybrid vehicles. It is AEC-Q101 qualified and PPAP capable, ensuring reliability for automotive use.

 

The component is housed in a TO-247-3 package, suitable for through-hole mounting. It is also RoHS compliant with exemption 7a and Pb-Free.

NVHL040N120SC1 Quick Information

Product Type: MOSFET
Series: NVHL040N120SC1
Canonical Name: NVHL040N120SC1 Silicon Carbide MOSFET
Subcategory: Single

NVHL040N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI (on second level interconnection)

NVHL040N120SC1 Estimated Pricing

Qty Low High
1+ $17.02 $17.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVHL040N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • 60A continuous drain current capability.
  • Low 40mOhm typical on-resistance.
  • 106nC typical total gate charge.
  • AEC-Q101 qualified for automotive use.

NVHL040N120SC1 Applications

  • Automotive on-board chargers.
  • EV/HEV DC-DC converters.
  • High-efficiency power supplies.
  • Switching power applications.

NVHL040N120SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVHL040N120SC1?

The maximum drain-to-source voltage (Vds) is 1200 V.

What is the typical on-resistance of the NVHL040N120SC1 MOSFET?

The typical on-resistance (Rds(on)) is 40 mΩ.

What is the continuous drain current rating at 25°C?

The continuous drain current (Id) is 60 A at a case temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVHL040N120SC1 supplied in?

The device is supplied in a TO-247-3 package.

Is the NVHL040N120SC1 AEC-Q101 qualified?

Yes, the device is AEC-Q101 Qualified and PPAP Capable.

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