| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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188 pcs
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188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVHL027N65S3F is a high-performance N-Channel MOSFET from the SUPERFET III family, utilizing charge balance technology for low on-resistance and efficient switching. This device features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 75A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds(on)) of 27.4mOhm at 35A and 10V, a gate charge (Qg) of 227nC at 10V, and an input capacitance (Ciss) of 7780pF at 400V. The gate-to-source voltage (Vgs) is rated at ±30V, with a gate threshold voltage (Vgs(th)) of 5V at 3mA. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
With a maximum power dissipation of 595W at 25°C case temperature, this MOSFET is suitable for demanding power systems. It is packaged in a TO-247-3 through-hole configuration, designed for robust thermal performance and ease of mounting.
The SUPERFET III FRFET MOSFET variant offers optimized reverse recovery performance of its body diode, potentially reducing the need for additional components and improving system reliability. Applications include automotive on-board chargers and DC/DC converters for HEV/EV systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current (Id) is 75A at a case temperature of 25°C.
The typical on-resistance (Rds(on)) is 27.4mOhm when measured at 35A drain current and 10V gate-source voltage.
The operating and storage temperature range is -55°C to 150°C (TJ).
This MOSFET is supplied in a TO-247-3 package and is designed for through-hole mounting.