| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The NVHL025N065SC1 from On Semiconductor is an EliteSiC MOSFET designed for high-performance power switching applications. This 650V device features a low ON-resistance, with a typical value of 19 mOhms at VGS = 18V and 25 mOhms at VGS = 15V. Its compact chip size contributes to ultra-low gate charge (QG(tot) = 164 nC) and low output capacitance (Coss = 278 pF), enabling high efficiency, fast switching frequencies, and reduced EMI.
This SiC MOSFET offers enhanced reliability compared to traditional silicon devices. It is 100% avalanche tested and qualified to AEC-Q101 standards, ensuring robustness for critical applications. The component is supplied in a TO-247-3LD package, suitable for power electronics designs.
Typical applications for the NVHL025N065SC1 include integrated automotive chargers and DC/DC converters for electric and hybrid electric vehicles (EV/HEV). Its characteristics make it a strong candidate for power management solutions requiring high efficiency and power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical ON-resistance is 19 mOhms at VGS = 18 V and 25 mOhms at VGS = 15 V.
The drain-source voltage rating is 650V.
The total gate charge is 164 nC.
The output capacitance (Coss) is 278 pF.
It is supplied in a TO-247-3LD package.
Yes, this device is qualified AEC-Q101.