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NVH4L160N120SC1 The On Semiconductor NVH4L160N120SC1 is a Silicon Carbide N-Channel MOSFET designed for high-voltage applications. It features a 1200V drain-to-source voltage and a continuous current rating of 17.3A.
Mfr Part #:

NVH4L160N120SC1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVH4L160N120SC1 is a Silicon Carbide N-Channel MOSFET designed for high-voltage applications. It features a 1200V drain-to-source voltage and a continuous current rating of 17.3A.
✓ Total Stock: 3,700 pcs
$ Price Range: $0.99

NVH4L160N120SC1 Available from 2 distributors

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✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
2,700 pcs
On Request
2700 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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NVH4L160N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rds On (Typ)
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVH4L160N120SC1 Description

Short technical summary and product information.

The NVH4L160N120SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. It is rated for a maximum drain-to-source voltage of 1200V and can handle a continuous drain current of 17.3A at 25°C case temperature. The device offers a low on-resistance, with a maximum specified at 224mOhm at 12A and 20V gate-source voltage.

 

This MOSFET is designed for demanding applications, featuring a low gate charge of 34 nC and an output capacitance of 49.5 pF, contributing to high-speed switching capabilities. It operates within a wide temperature range of -55°C to +175°C.

 

The NVH4L160N120SC1 is housed in a TO-247-4L package, suitable for through-hole mounting. Its AEC-Q101 qualification and PPAP capability make it suitable for automotive applications such as on-board chargers and DC-DC converters for electric and hybrid vehicles.

NVH4L160N120SC1 Quick Information

Product Type: MOSFET
Series: NVH4L160N120SC1
Canonical Name: On Semiconductor NVH4L160N120SC1 Silicon Carbide N-Channel MOSFET
Subcategory: N-Channel

NVH4L160N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NVH4L160N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVH4L160N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • 17.3A continuous drain current capability.
  • Low 160mOhm typical on-resistance.
  • AEC-Q101 qualified for automotive use.
  • TO-247-4L package for through-hole mounting.

NVH4L160N120SC1 Applications

  • Automotive on-board chargers.
  • EV/HEV DC-DC converters.
  • High-voltage power systems.
  • Switch-mode power supplies.

NVH4L160N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVH4L160N120SC1?

The maximum drain-to-source voltage (Vdss) is 1200 V.

What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 160 mOhm.

What is the continuous drain current rating?

The continuous drain current is 17.3 A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVH4L160N120SC1 supplied in?

It is supplied in a TO-247-4L package.

Is this MOSFET AEC-Q101 qualified?

Yes, this device is AEC-Q101 qualified and PPAP capable.

What are the typical applications for this SiC MOSFET?

Typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV.

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