NVH4L075N065SC1 The NVH4L075N065SC1 is a silicon carbide MOSFET with a drain-to-source voltage of 650V, designed for high-voltage switching applications. It features an N-channel configuration and is packaged in a TO-247-4L package suitable for through-hole mounting.
Mfr Part #:

NVH4L075N065SC1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVH4L075N065SC1 is a silicon carbide MOSFET with a drain-to-source voltage of 650V, designed for high-voltage switching applications. It features an N-channel configuration and is packaged in a TO-247-4L package suitable for through-hole mounting.
✓ Total Stock: 111,300 pcs
$ Price Range: $0.99

NVH4L075N065SC1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
105,300 pcs
105300 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

NVH4L075N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVH4L075N065SC1 Description

Short technical summary and product information.

The NVH4L075N065SC1 is a silicon carbide (SiC) MOSFET manufactured by On Semiconductor. It is designed for high-voltage power switching applications, with a drain-to-source voltage rating of 650V. The device features an N-channel FET structure, optimized for high efficiency and fast switching. It is packaged in a TO-247-4L package, which is suitable for through-hole mounting in power electronic circuits. The device's specifications include a maximum continuous drain current of 38A at 25°C, a maximum on-resistance of 85 milliohms at 15A and 18V, and a gate threshold voltage of 4.3V at 5mA. Its thermal characteristics include a maximum junction-to-ambient thermal resistance of 40°C/W and a maximum power dissipation of 148W at 25°C. The device is RoHS3 compliant and Pb-free, suitable for environmentally conscious designs.

NVH4L075N065SC1 Quick Information

Product Type: MOSFET
Series: NVH4L075N065SC1
Canonical Name: NVH4L075N065SC1

NVH4L075N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVH4L075N065SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVH4L075N065SC1 Features

  • 650V drain-to-source voltage rating
  • Silicon carbide (SiC) technology
  • N-channel FET configuration
  • TO-247-4L package for through-hole mounting
  • Maximum on-resistance of 85 milliohms

NVH4L075N065SC1 Applications

  • High-voltage power switching circuits
  • Industrial motor drives
  • Renewable energy inverters
  • Electric vehicle power modules

NVH4L075N065SC1 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the NVH4L075N065SC1?

The NVH4L075N065SC1 has a drain-to-source voltage of 650V.

What package does the NVH4L075N065SC1 come in?

It is packaged in a TO-247-4L package.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 38A at 25°C.

Is the NVH4L075N065SC1 RoHS compliant?

Yes, it is RoHS3 compliant.

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