Mfr Part #:

NVH4L075N065SC1

Name: NVH4L075N065SC1
Brand: On Semiconductor
SKU: NVH4L075N065SC1
Availability: InStock

Mfr Name: On Semiconductor

Description:

SIC MOS TO247-4L 650V

✓ Total Stock: 111,300 pcs

NVH4L075N065SC1 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	6,000 pcs On Request	6000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	105,300 pcs On Request	105300 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

SIC MOS TO247-4L 650V

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

NTH4L075N065SC1

On Semiconductor

SILICON CARBIDE (SIC) MOSFET - 5

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	38A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1196 pF @ 325 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	148W (Tc)
Rds On (Max) @ Id, Vgs	85mOhm @ 15A, 18V
Supplier Device Package	TO-247-4L
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -8V
Vgs(th) (Max) @ Id	4.3V @ 5mA