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NVH4L060N090SC1 The NVH4L060N090SC1 is an N-Channel Silicon Carbide MOSFET from On Semiconductor. It offers a high drain-to-source voltage of 900V and a continuous drain current of 46A.
Mfr Part #:

NVH4L060N090SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVH4L060N090SC1 is an N-Channel Silicon Carbide MOSFET from On Semiconductor. It offers a high drain-to-source voltage of 900V and a continuous drain current of 46A.
✓ Total Stock: 2,250 pcs
$ Price Range: $14.25

NVH4L060N090SC1 Available from 1 distributor

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✓ Non-Authorised
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2,250 pcs
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NVH4L060N090SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVH4L060N090SC1 Description

Short technical summary and product information.

The On Semiconductor NVH4L060N090SC1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. It features a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 46A at 25°C case temperature. The device exhibits a low on-resistance (Rds(on)) of 84mOhm at 20A and 15V gate-source voltage, with a typical value of 43mOhm at 18V gate-source voltage.

 

With an operating temperature range of -55°C to 175°C, this MOSFET is suitable for challenging environments. It is housed in a TO-247-4L package, designed for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 87 nC at 15V and an input capacitance (Ciss) of 1770 pF at 450V.

 

Typical applications for the NVH4L060N090SC1 include automotive on-board chargers and DC-DC converters for electric and hybrid electric vehicles (EV/HEV). The device is AEC-Q101 qualified and PPAP capable, ensuring reliability for automotive use. It is also RoHS compliant with exemption 7a and Halide-free.

NVH4L060N090SC1 Quick Information

Product Type: MOSFET
Canonical Name: NVH4L060N090SC1 N-Channel Silicon Carbide MOSFET
Subcategory: Single FETs

NVH4L060N090SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVH4L060N090SC1 Estimated Pricing

Qty Low High
1+ $14.25 $14.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVH4L060N090SC1 Features

  • 900V drain-to-source voltage rating.
  • 46A continuous drain current.
  • Low 84mOhm Rds(on) at 15V.
  • TO-247-4L through-hole package.
  • AEC-Q101 Qualified for automotive.

NVH4L060N090SC1 Applications

  • Suitable for automotive on-board chargers.
  • Ideal for EV/HEV DC-DC converters.
  • Used in high-voltage power switching applications.
  • Applicable in industrial motor control circuits.
  • Suitable for high-temperature power management.

NVH4L060N090SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVH4L060N090SC1?

The maximum drain-to-source voltage (Vdss) is 900 V.

What is the typical on-resistance of the NVH4L060N090SC1 at 15V gate drive?

The typical on-resistance (Rds(on)) is 60 mOhm at 20A drain current and 15V gate-source voltage.

What is the continuous drain current rating for the NVH4L060N090SC1?

The continuous drain current is 46A at a case temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVH4L060N090SC1 supplied in?

The device is supplied in a TO-247-4L package.

Is the NVH4L060N090SC1 RoHS compliant?

Yes, the device is RoHS3 Compliant.

What are the typical applications for the NVH4L060N090SC1?

Typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV.

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