| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,350 pcs
|
1350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The ON Semiconductor NVH4L045N065SC1 is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It features a maximum drain-to-source voltage of 650V and a continuous drain current of 55A at 25°C case temperature.
Key electrical characteristics include a typical on-resistance (RDS(on)) of 33 mOhm at 18V Vgs and 45 mOhm at 15V Vgs. The device also boasts low gate charge (Qg) of 105 nC and low output capacitance (Coss) of 162 pF, enabling high-speed switching.
This MOSFET is housed in a TO-247-4L package, suitable for through-hole mounting. It operates across a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 187W at 25°C case temperature. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications like on-board chargers and DC-DC converters for EV/HEV.
Compliance includes Halide Free and Pb-Free 2LI. The RoHS status is listed as Compliant, MSL 1, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The typical on-resistance is 33 mOhm at 18V Vgs, and 45 mOhm at 15V Vgs.
The maximum continuous drain current is 55A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a TO-247-4L package.
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level is 1.