Mfr Part #:

NVH4L020N120SC1

The ON Semiconductor NVH4L020N120SC1 is a Silicon Carbide N-Channel MOSFET designed for high-performance applications. It features a 1200V drain-to-source voltage and a low on-resistance.

✓ Total Stock: 5,450 pcs

$ Price Range: $0.99

NVH4L020N120SC1 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	450 pcs On Request	450 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVH4L020N120SC1 Description

Short technical summary and product information.

The NVH4L020N120SC1 from ON Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. It is rated for a maximum drain-to-source voltage of 1200V and offers a low typical on-resistance of 20 mOhm at 60A and 20V gate drive.

This MOSFET boasts an ultra-low gate charge of 220 nC and high-speed switching capabilities with low output capacitance. It is 100% avalanche tested and AEC-Q101 qualified, making it suitable for demanding automotive applications.

The device comes in a TO-247-4L package, designed for through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (TJ) and can handle significant power dissipation up to 500W at 25°C case temperature.

Typical applications include automotive on-board chargers, DC-DC converters for electric and hybrid vehicles, and traction inverters. Its SiC technology provides superior performance compared to traditional silicon MOSFETs.

NVH4L020N120SC1 Quick Information

Product Type: MOSFET

Canonical Name: NVH4L020N120SC1 Silicon Carbide N-Channel MOSFET

Subcategory: N-Channel

NVH4L020N120SC1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb−Free 2LI

NVH4L020N120SC1 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVH4L020N120SC1 Features

1200V drain-to-source voltage rating.
Low 20 mOhm typical on-resistance.
Ultra-low gate charge (220 nC).
High-speed switching capability.
AEC-Q101 qualified for automotive.

NVH4L020N120SC1 Applications

High-voltage power switching applications
Industrial motor control circuits
Power supply regulation
High-temperature power modules

NVH4L020N120SC1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the NVH4L020N120SC1?

The maximum drain-to-source voltage is 1200 V.

What is the typical on-resistance of the NVH4L020N120SC1?

The typical on-resistance is 20 mOhm at 60A and 20V.

What is the gate charge for this MOSFET?

The gate charge is a maximum of 220 nC at 20V.

What package type is the NVH4L020N120SC1 supplied in?

It is supplied in a TO-247-4L package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	102A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 20 V
Halogen Free	Halide Free
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	2943 pF @ 800 V
Medical Grade	No
Military Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	510W (Tc)
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
Supplier Device Package	TO-247-4L
Supplier Package	TO-247-4L
Tape & Reel	No
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	-15V / +25V
Vgs(th) (Max) @ Id	4.3V @ 20mA