| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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900 pcs
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900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVH4L020N090SC1 from ON Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It features a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current of 116A at a case temperature of 25°C, with a maximum power dissipation of 484W.
This MOSFET boasts a low on-state resistance, with a typical value of 20 mOhm at Vgs = 15V and a maximum of 16 mOhm at 60A and 18V. It also has a low gate charge (Qg) of 196 nC typical and an input capacitance (Ciss) of 4415 pF maximum. The device operates across a wide temperature range from -55°C to 175°C (TJ).
Packaged in a TO-247-4L configuration, the NVH4L020N090SC1 is suitable for through-hole mounting. Its SiC technology provides advantages in terms of efficiency and thermal performance compared to traditional silicon MOSFETs.
Typical applications include automotive traction inverters, on-board chargers, and DC-DC converters for electric and hybrid vehicles. The device is AEC-Q101 qualified and PPAP capable, and is Halide Free and RoHS Compliant with exemption 7a.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 900 V.
The typical on-state resistance is 20 mOhm at Vgs = 15V, and 16 mOhm at Vgs = 18V.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-247-4L package.
Yes, it is RoHS3 Compliant.