NVH4L020N090SC1 The ON Semiconductor NVH4L020N090SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a 900V drain-to-source voltage and a continuous drain current of 116A at 25°C.
Mfr Part #:

NVH4L020N090SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVH4L020N090SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a 900V drain-to-source voltage and a continuous drain current of 116A at 25°C.
✓ Total Stock: 900 pcs
$ Price Range: $0.99

NVH4L020N090SC1 Available from 1 distributor

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NVH4L020N090SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVH4L020N090SC1 Description

Short technical summary and product information.

The NVH4L020N090SC1 from ON Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It features a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current of 116A at a case temperature of 25°C, with a maximum power dissipation of 484W.

 

This MOSFET boasts a low on-state resistance, with a typical value of 20 mOhm at Vgs = 15V and a maximum of 16 mOhm at 60A and 18V. It also has a low gate charge (Qg) of 196 nC typical and an input capacitance (Ciss) of 4415 pF maximum. The device operates across a wide temperature range from -55°C to 175°C (TJ).

 

Packaged in a TO-247-4L configuration, the NVH4L020N090SC1 is suitable for through-hole mounting. Its SiC technology provides advantages in terms of efficiency and thermal performance compared to traditional silicon MOSFETs.

 

Typical applications include automotive traction inverters, on-board chargers, and DC-DC converters for electric and hybrid vehicles. The device is AEC-Q101 qualified and PPAP capable, and is Halide Free and RoHS Compliant with exemption 7a.

NVH4L020N090SC1 Quick Information

Product Type: MOSFET
Canonical Name: NVH4L020N090SC1 Silicon Carbide (SiC) N-Channel MOSFET
Subcategory: N-Channel

NVH4L020N090SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NVH4L020N090SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVH4L020N090SC1 Features

  • 900V drain-to-source voltage rating.
  • 116A continuous drain current.
  • Low on-state resistance.
  • Wide operating temperature range.
  • AEC-Q101 Qualified.

NVH4L020N090SC1 Applications

  • Automotive traction inverters.
  • Automotive on-board chargers.
  • Automotive DC-DC converters.
  • EV/HEV power systems.

NVH4L020N090SC1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVH4L020N090SC1?

The maximum drain-to-source voltage (Vdss) is 900 V.

What is the typical on-state resistance of this MOSFET?

The typical on-state resistance is 20 mOhm at Vgs = 15V, and 16 mOhm at Vgs = 18V.

What is the operating temperature range for the NVH4L020N090SC1?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVH4L020N090SC1 supplied in?

It is supplied in a TO-247-4L package.

Is the NVH4L020N090SC1 RoHS compliant?

Yes, it is RoHS3 Compliant.

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