| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,950 pcs
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4950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVH4L015N065SC1 from ON Semiconductor is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. This device features a 650V drain-to-source breakdown voltage and a maximum on-resistance of 18 mOhm at 75A and 18V gate-source voltage. It can handle a continuous drain current of 142A at 25°C case temperature and a maximum power dissipation of 500W.
With a typical RDS(on) of 12 mOhm at 18V gate-source voltage, this SiC MOSFET offers excellent efficiency. Key electrical characteristics include an input capacitance of 4790 pF and a gate charge of 283 nC. The operating temperature range is -55°C to 175°C.
Packaged in a TO-247-4L through-hole configuration, the NVH4L015N065SC1 is suitable for various power electronics applications. It is AEC-Q101 qualified and RoHS compliant.
Typical applications include automotive on-board chargers, automotive DC-DC converters for EV/HEV, and automotive traction inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650 V.
The typical on-resistance is 12 mOhm at a gate-source voltage of 18V.
The continuous drain current is 142A at a case temperature of 25°C.
The operating junction temperature range is -55°C to 175°C.
This MOSFET is supplied in a TO-247-4L package.
Yes, this device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.