| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,400 pcs
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5400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVH050N65S3F is an N-Channel MOSFET manufactured by ON Semiconductor, designed for power applications. It features a high drain-source breakdown voltage of 650V and a continuous drain current capability of 58A at a case temperature.
Key electrical characteristics include a maximum on-state drain-source resistance of 50mOhm at 29A and 10V gate-source voltage, and a gate charge of 123nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a TO-247-3 package, suitable for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering efficient switching and power handling capabilities for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 650V.
The continuous drain current is 58A.
The maximum on-state resistance is 50mOhm.
The operating temperature range is -55°C to 150°C.
The NVH050N65S3F is supplied in a TO-247-3 package.
The NVH050N65S3F is mounted using the through-hole method.