| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVGS4111PT1G is a P-Channel MOSFET manufactured by ON Semiconductor, designed for applications requiring efficient power switching. It features a leading -30V trench process for low RDS(on) and a low profile TSOP-6 package, making it suitable for portable devices.
Key electrical characteristics include a maximum drain-to-source voltage of -30V and a continuous drain current of 3.7A at 25°C (Ta). The on-resistance (Rds(on)) is a maximum of 60mOhm at 3.7A and 10V Vgs. Input capacitance (Ciss) is 750pF at 15V, and gate charge (Qg) is 32nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). The power dissipation is rated at 630mW (Ta) when surface-mounted on a minimum recommended pad size. The device is available in a Pb-Free package.
Applications include battery management and switching, load switching, and battery protection. Its surface mount TSOP-6 package saves board space and is ideal for battery-powered applications requiring improved efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V
3.7 A
60mOhm @ 3.7A, 10V
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
RoHS3 Compliant
1 Unlimited