NVGS3443T1G The On Semiconductor NVGS3443T1G is a P-Channel MOSFET designed for power management in portable devices. It features a 20V drain-to-source voltage and a 65mOhm maximum on-resistance.
Mfr Part #:

NVGS3443T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVGS3443T1G is a P-Channel MOSFET designed for power management in portable devices. It features a 20V drain-to-source voltage and a 65mOhm maximum on-resistance.
✓ Total Stock: 22,834 pcs
$ Price Range: $0.99

NVGS3443T1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request 1830+ On Request On Request
Non-Authorised Inventory information
1,834 pcs
1834 pcs On Request 1 On Request On Request On Request On Request On Request

NVGS3443T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVGS3443T1G Description

Short technical summary and product information.

The NVGS3443T1G from On Semiconductor is a P-Channel MOSFET designed for efficient power management in portable and battery-powered products. This device offers a drain-to-source voltage of 20V and a continuous drain current of up to 4.4A at 25°C.

 

Key electrical characteristics include a low on-resistance of 65mOhm at 4.4A and 4.5V Vgs, and a gate threshold voltage of 1.5V maximum. The MOSFET also features an input capacitance of 565pF and a gate charge of 15nC.

 

Packaged in a miniature TSOP-6 surface mount package, the NVGS3443T1G is suitable for space-constrained applications. It operates across a wide temperature range of -55°C to 150°C.

 

This device is Pb-free and RoHS compliant, making it suitable for various electronic designs requiring efficient power switching.

NVGS3443T1G Quick Information

Product Type: MOSFET
Canonical Name: NVGS3443T1G P-Channel MOSFET
Subcategory: P-Channel

NVGS3443T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVGS3443T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVGS3443T1G Features

  • P-Channel MOSFET for power management.
  • 20V drain-to-source voltage rating.
  • 4.4A continuous drain current.
  • Low 65mOhm on-resistance.
  • Miniature TSOP-6 surface mount package.

NVGS3443T1G Applications

  • Power management in portable products.
  • Battery-powered device applications.
  • Cellular and cordless telephones.
  • PCMCIA card power control.

NVGS3443T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVGS3443T1G?

The drain-to-source voltage (Vdss) for the NVGS3443T1G is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.4A at 25°C.

What is the on-resistance of the NVGS3443T1G?

The on-resistance (Rds On) is a maximum of 65mOhm when the drain current is 4.4A and the gate-to-source voltage is 4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NVGS3443T1G supplied in?

The NVGS3443T1G is supplied in a TSOP-6 package.

Is the NVGS3443T1G RoHS compliant?

Yes, the NVGS3443T1G is RoHS3 Compliant.

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