| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
82,807 pcs
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82807 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVGS3441T1G is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 1.65A at ambient temperature. The Rds On is specified at a maximum of 90mOhm under specific test conditions (3.3A, 4.5V).
This MOSFET has a gate charge (Qg) of 14 nC at 4.5V and an input capacitance (Ciss) of 480 pF at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).
The NVGS3441T1G is surface-mounted and comes in a SOT-23-6 Thin, TSOT-23-6 package, also referred to as 6-TSOP. It is classified under MOSFET technology and is suitable for applications requiring a P-Channel enhancement mode device.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NVGS3441T1G is 20V.
The continuous drain current (Id) for the NVGS3441T1G is 1.65A at ambient temperature.
The Rds On is a maximum of 90mOhm when measured at 3.3A drain current and 4.5V gate-source voltage.
The operating temperature range for the NVGS3441T1G is -55°C to 150°C (TJ).
The NVGS3441T1G is supplied in a SOT-23-6 Thin, TSOT-23-6 package, which is a 6-TSOP.
The NVGS3441T1G is a surface mount device.