NVGS3441T1G The ON Semiconductor NVGS3441T1G is a P-Channel MOSFET with a 20V drain-to-source voltage and a continuous drain current of 1.65A. It is supplied in a 6-TSOP package.
Mfr Part #:

NVGS3441T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVGS3441T1G is a P-Channel MOSFET with a 20V drain-to-source voltage and a continuous drain current of 1.65A. It is supplied in a 6-TSOP package.
✓ Total Stock: 82,807 pcs
$ Price Range: $0.99

NVGS3441T1G Available from 1 distributor

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NVGS3441T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVGS3441T1G Description

Short technical summary and product information.

The ON Semiconductor NVGS3441T1G is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 1.65A at ambient temperature. The Rds On is specified at a maximum of 90mOhm under specific test conditions (3.3A, 4.5V).

 

This MOSFET has a gate charge (Qg) of 14 nC at 4.5V and an input capacitance (Ciss) of 480 pF at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. It operates within a temperature range of -55°C to 150°C (TJ).

 

The NVGS3441T1G is surface-mounted and comes in a SOT-23-6 Thin, TSOT-23-6 package, also referred to as 6-TSOP. It is classified under MOSFET technology and is suitable for applications requiring a P-Channel enhancement mode device.

NVGS3441T1G Quick Information

Product Type: MOSFET
Canonical Name: NVGS3441T1G P-Channel MOSFET
Subcategory: P-Channel

NVGS3441T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVGS3441T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVGS3441T1G Features

  • P-Channel MOSFET technology.
  • 20V drain-to-source voltage.
  • 1.65A continuous drain current.
  • Surface mount SOT-23-6 Thin package.
  • Operates from -55°C to 150°C.

NVGS3441T1G Applications

  • Suitable for low-voltage load switching applications.
  • Used in portable electronic devices requiring compact MOSFETs.
  • Ideal for battery management systems in consumer electronics.
  • Applicable in power management circuits with high-temperature operation.
  • Used in automotive control modules for efficient power regulation.

NVGS3441T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NVGS3441T1G?

The maximum drain-to-source voltage (Vdss) for the NVGS3441T1G is 20V.

What is the continuous drain current (Id) of the NVGS3441T1G?

The continuous drain current (Id) for the NVGS3441T1G is 1.65A at ambient temperature.

What is the Rds On for the NVGS3441T1G?

The Rds On is a maximum of 90mOhm when measured at 3.3A drain current and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range for the NVGS3441T1G is -55°C to 150°C (TJ).

What package type is the NVGS3441T1G supplied in?

The NVGS3441T1G is supplied in a SOT-23-6 Thin, TSOT-23-6 package, which is a 6-TSOP.

How is the NVGS3441T1G mounted?

The NVGS3441T1G is a surface mount device.

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