NVF2955T1G

The NVF2955T1G is a P-Channel MOSFET manufactured by On Semiconductor, suitable for power supplies, PWM motor control, converters, and power management applications. It offers a drain-to-source voltage (Vdss) of -60V and a continuous drain current of up to -2.6A at 25°C ambient temperature when surface mounted on an FR4 board with a 1 sq. in. pad size. The device has a maximum power dissipation of 2.3W under the same conditions. Its Rds(on) is a maximum of 170mOhm at 750mA and 10V gate-source voltage, with a gate-to-source voltage range of ±20V. The MOSFET operates within a junction and storage temperature range of -55°C to 175°C. It is packaged in a SOT-223 (TO-261) surface mount package.

Key electrical characteristics include an input capacitance (Ciss) of 492pF at 25V and a gate charge (Qg) of 14.3nC at 10V. The thermal resistance from junction-to-tab is 14°C/W, and junction-to-ambient is 65°C/W when mounted on a 1 sq. in. pad. The device is Pb-Free and RoHS compliant.