| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78,000 pcs
|
78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVE4153NT1G is a single N-Channel MOSFET designed for small signal applications. It offers a drain-to-source voltage of 20V and a continuous drain current of 915mA at 25°C ambient temperature. The device features low RDS(on), improving system efficiency, with a maximum of 230mOhm at 600mA and 4.5V Vgs. Its gate threshold voltage is rated at 1.1V maximum at 250µA, with a low threshold voltage of 1.5V rated.
This MOSFET is suitable for various applications including load/power switches, power supply converter circuits, and battery management. It is particularly useful in portable devices such as cell phones, PDAs, and digital cameras. The device includes ESD protection on the gate.
The NVE4153NT1G is housed in an SC-89 package, a surface-mount type, and operates within a temperature range of -55°C to 150°C. The NV prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. Pb-Free packages are also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NVE4153NT1G is 20V.
The continuous drain current is 915mA at 25°C ambient temperature.
The maximum Rds On is 230mOhm when tested at 600mA drain current and 4.5V gate-source voltage.
The gate threshold voltage (Vgs(th)) is a maximum of 1.1V at a drain current of 250µA.
The operating junction and storage temperature range is -55°C to 150°C.
The NVE4153NT1G is supplied in an SC-89 package.