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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Current | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage (Max) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The NVDSH50120C is a Silicon Carbide (SiC) Schottky rectifier diode from On Semiconductor, designed for high-efficiency power conversion applications. With a maximum reverse voltage rating of 1200V and a maximum forward current of 53A, it provides robust performance in demanding environments.
The diode features a low typical forward voltage of 1.75V at 50A, and a typical capacitance of 3691pF at 1V and 100kHz. It offers zero reverse recovery time (trr = 0 ns), thanks to its SiC Schottky technology, enabling high-frequency operation with minimal switching losses.
Housed in a through-hole TO-247-2 package, the NVDSH50120C is suitable for through-hole mounting. It operates over a wide temperature range from -55°C to 175°C. The device is listed as RoHS3 compliant, with MSL level 1 and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 450+ | $15.68 | $15.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V maximum.
53A maximum.
1.75V typical at 50A.
0 ns (zero recovery time).
TO-247-2 (through-hole).
Silicon Carbide (SiC) Schottky.
-55°C to 175°C.