| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,060 pcs
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28060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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This N-Channel MOSFET from ON Semiconductor, part number NVDS015N15MCT4G, utilizes Shielded Gate PowerTrench technology. It offers a drain-to-source voltage (Vds) of 150V and a low maximum on-resistance of 15mOhm at a gate-source voltage (Vgs) of 10V, with a continuous drain current of 61.3A at 25°C case temperature.
The device features a maximum gate-to-source voltage of ±20V and a gate threshold voltage of 4.5V at 162µA. Its input capacitance is 2120pF at 75V, and the gate charge is 27nC at 10V. The MOSFET is designed for efficient operation with low conduction and driver losses.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, this component is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive applications. It operates within a temperature range of -55°C to 175°C.
Key electrical characteristics include a maximum power dissipation of 107.1W at 25°C case temperature and 3.1W at 25°C ambient temperature. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 150 V.
The maximum on-resistance (Rds(on)) is 15mOhm at 29A drain current and 10V gate-source voltage.
The continuous drain current is 61.3 A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
The device is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the device is RoHS3 Compliant.
Yes, the device is AEC-Q101 Qualified.