| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=100 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=100 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Gate-to-Source Leakage Current | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum @ Ta = 100 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Rds On Max (Maximum @ ID = 50 A, VGS = 4.5 V) | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 40 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 40 V, TJ = 25 °C) |
The ON Semiconductor NVDD5894NLT4G is a Dual N-Channel Power MOSFET designed for efficient power management. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 14A at 25°C ambient temperature, with higher current ratings available at case temperature.
This MOSFET offers low conduction losses with a maximum Rds(on) of 10mOhm at 50A and 10V Vgs. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.5V maximum, input capacitance (Ciss) of 2103pF, and gate charge (Qg) of 41nC.
The device operates within a junction temperature range of -55°C to 175°C and has a power dissipation of 3.8W at 25°C ambient. It is specified with a single pulse drain-to-source avalanche energy (EAS) of 94mJ.
Packaged in a TO-252-5, DPAK (4 Leads + Tab), TO-252AD surface mount package, the NVDD5894NLT4G is AEC-Q101 qualified and RoHS compliant, making it suitable for various automotive and industrial applications requiring high current capability and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current (Id) is 64A at 25°C case temperature.
The maximum Rds(on) is 10mOhm at 50A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
The NVDD5894NLT4G is supplied in a TO-252-5, DPak (4 Leads + Tab), TO-252AD package.
Yes, the NVDD5894NLT4G is RoHS3 Compliant.
Yes, the NVDD5894NLT4G is AEC-Q101 Qualified.