Mfr Part #:

NVD5C688NLT4G

The NVD5C688NLT4G is an N-Channel Power MOSFET from ON Semiconductor. It features a 60V drain-to-source voltage and a continuous drain current of 17A.

✓ Total Stock: 101,651 pcs

$ Price Range: $1.16

NVD5C688NLT4G Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	100,000 pcs On Request	100000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,651 pcs On Request	1651 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVD5C688NLT4G Description

Short technical summary and product information.

The ON Semiconductor NVD5C688NLT4G is a single N-Channel Power MOSFET designed for efficient power management. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 17A at a case temperature of 25°C. The MOSFET exhibits a low on-resistance (Rds(on)) of 27.4mOhm at 10A and 10V, minimizing conduction losses.

This device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It operates over a wide temperature range from -55°C to 175°C (TJ). The MOSFET is available in a surface-mount DPAK (TO-252-3) package, facilitating integration into compact designs.

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.1V maximum at 250µA, an input capacitance (Ciss) of 400pF maximum at 25V, and a gate charge (Qg) of 3.4nC maximum at 4.5V. The device also features low gate charge and capacitance to minimize driver losses, making it suitable for applications requiring efficient switching.

Compliance includes Pb-free and Halogen-free status, along with RoHS 3 compliance. The NVD5C688NLT4G is designed to minimize conduction and driver losses, making it a robust choice for various power switching applications.

NVD5C688NLT4G Quick Information

Product Type: MOSFET

Canonical Name: NVD5C688NLT4G N-Channel Power MOSFET

NVD5C688NLT4G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVD5C688NLT4G Estimated Pricing

Qty	Low	High
1+	$1.16	$1.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5C688NLT4G Features

60V drain-to-source voltage rating.
17A continuous drain current capability.
Low Rds(on) of 27.4mOhm at 10A, 10V.
AEC-Q101 qualified for automotive use.
Surface mount DPAK package for compact designs.

NVD5C688NLT4G Applications

Ideal for power switching circuits.
Suitable for automotive applications.
Used in low conduction loss designs.
Efficient driver loss minimization.

NVD5C688NLT4G FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the NVD5C688NLT4G?

60 V

What package does the NVD5C688NLT4G come in?

DPAK

What is the maximum gate-to-source voltage for this MOSFET?

±16V

What is the maximum operating temperature of the NVD5C688NLT4G?

-55°C to 175°C

Is the NVD5C688NLT4G RoHS compliant?

Yes, it is RoHS3 compliant

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	17 A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 4.5 V
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Lead Style	Dpak
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	18 W (Tc)
Rds On (Max) @ Id, Vgs	27.4mOhm
Supplier Device Package	DPAK
Supplier Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.1V @ 250µA