NVD5C668NLT4G The On Semiconductor NVD5C668NLT4G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a maximum continuous drain current of 49A.
Mfr Part #:

NVD5C668NLT4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVD5C668NLT4G is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and a maximum continuous drain current of 49A.
✓ Total Stock: 4,760 pcs
$ Price Range: $0.99

NVD5C668NLT4G Available from 3 distributors

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3,421 pcs
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NVD5C668NLT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD5C668NLT4G Description

Short technical summary and product information.

The NVD5C668NLT4G from ON Semiconductor is a power MOSFET featuring an N-Channel configuration. It is designed with low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses. This device is AEC-Q101 Qualified and PPAP Capable.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 60V and a maximum continuous drain current of 49A at 25°C case temperature. The on-resistance (Rds(on)) is rated at a maximum of 8.9mOhm at 25A and 10V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.1V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has an input capacitance (Ciss) of 1300 pF at 25V and a gate charge (Qg) of 8.7 nC at 4.5V. The device supports a gate-to-source voltage (Vgs) of up to ±20V.

 

The NVD5C668NLT4G is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NVD5C668NLT4G Quick Information

Product Type: MOSFET
Series: NVD5C668NLT4G
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVD5C668NLT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5C668NLT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5C668NLT4G Features

  • 60V drain-to-source voltage rating.
  • 49A maximum continuous drain current.
  • Low 8.9mOhm Rds(on) at 10V.
  • Surface mount TO-252-3 DPAK package.
  • AEC-Q101 Qualified and PPAP Capable.

NVD5C668NLT4G Applications

  • Designed for low conduction losses.
  • Minimizes driver losses effectively.
  • Suitable for power switching applications.
  • Automotive qualified component.

NVD5C668NLT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVD5C668NLT4G MOSFET?

The drain-to-source voltage (Vdss) for the NVD5C668NLT4G is 60V.

What is the maximum continuous drain current of the NVD5C668NLT4G?

The maximum continuous drain current is 49A when the case temperature is 25°C.

What is the Rds(on) of the NVD5C668NLT4G at 10V gate drive?

The Rds(on) is a maximum of 8.9mOhm at 25A drain current and 10V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVD5C668NLT4G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

Is the NVD5C668NLT4G RoHS compliant?

Yes, the NVD5C668NLT4G is RoHS3 Compliant.

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