NVD5C648NLT4G The On Semiconductor NVD5C648NLT4G is an N-Channel Power MOSFET designed for efficient power management. It offers a 60V drain-source voltage and a continuous drain current of up to 89A.
Mfr Part #:

NVD5C648NLT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVD5C648NLT4G is an N-Channel Power MOSFET designed for efficient power management. It offers a 60V drain-source voltage and a continuous drain current of up to 89A.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVD5C648NLT4G Available from 1 distributor

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NVD5C648NLT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD5C648NLT4G Description

Short technical summary and product information.

The NVD5C648NLT4G is an N-Channel MOSFET from On Semiconductor, designed to minimize conduction and driver losses. It features a low on-resistance of 4.1mOhm at 10V Vgs, enabling efficient power transfer.

 

With a drain-to-source voltage rating of 60V, this MOSFET can handle significant power. It offers a continuous drain current of 89A when measured at the case temperature (Tc=25°C) and 18A when measured at the ambient temperature (Ta=25°C). The device is qualified to AEC-Q101 standards and is PPAP capable, making it suitable for demanding applications.

 

The MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. Its operating temperature range is -55°C to 175°C (TJ), providing robustness in various environmental conditions. The device is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NVD5C648NLT4G Quick Information

Product Type: MOSFET
Series: NVD5C648NLT4G
Canonical Name: NVD5C648NL N-Channel Power MOSFET
Subcategory: N-Channel

NVD5C648NLT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5C648NLT4G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5C648NLT4G Features

  • 60V drain-to-source voltage rating.
  • Low 4.1mOhm Rds(on) at 10V Vgs.
  • High 89A continuous drain current (Tc).
  • AEC-Q101 qualified for reliability.
  • Surface mount TO-252 DPAK package.

NVD5C648NLT4G Applications

  • Suitable for high-efficiency power switching.
  • Ideal for automotive applications.
  • Used in power management circuits.
  • Designed for industrial equipment.

NVD5C648NLT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVD5C648NLT4G MOSFET?

The drain-to-source voltage (Vds) is 60 V.

What is the maximum continuous drain current for the NVD5C648NLT4G?

The continuous drain current is 89A when measured at the case temperature (Tc=25°C) and 18A when measured at the ambient temperature (Ta=25°C).

What is the on-resistance (Rds(on)) of the NVD5C648NLT4G?

The maximum on-resistance is 4.1mOhm at 45A drain current and 10V gate-source voltage.

What is the operating temperature range for the NVD5C648NLT4G?

The operating junction temperature range is -55°C to 175°C.

Is the NVD5C648NLT4G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What package type is the NVD5C648NLT4G supplied in?

The NVD5C648NLT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.

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