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NVD5890NT4G The ON Semiconductor NVD5890NT4G is an N-Channel MOSFET designed for high-current applications. It features a 40V drain-source voltage and a continuous drain current rating of 123A at 25°C case temperature.
Mfr Part #:

NVD5890NT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD5890NT4G is an N-Channel MOSFET designed for high-current applications. It features a 40V drain-source voltage and a continuous drain current rating of 123A at 25°C case temperature.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.99

NVD5890NT4G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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2,500 pcs
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NVD5890NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVD5890NT4G Description

Short technical summary and product information.

The ON Semiconductor NVD5890NT4G is a single N-Channel Power MOSFET designed for applications requiring high current handling capabilities. It offers a drain-to-source voltage (Vds) of 40V and a continuous drain current (Id) of 123A when measured at the case temperature (Tc) of 25°C. At an ambient temperature (Ta) of 25°C, the continuous drain current is rated at 24A.

 

This MOSFET boasts low Rds(on) to minimize conduction losses, with a typical value of 3.7mOhm at 50A and 10V Vgs. It operates within a wide temperature range from -55°C to 175°C (TJ). The device is AEC Q101 qualified and PPAP capable, making it suitable for automotive applications.

 

Packaged in a DPAK (TO-252-3) surface-mount package, the NVD5890NT4G is designed for efficient thermal management. Its features include a maximum power dissipation of 107W (Tc) and 4W (Ta), and it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NVD5890NT4G Quick Information

Product Type: MOSFET
Canonical Name: NVD5890NT4G N-Channel MOSFET
Subcategory: Single

NVD5890NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5890NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5890NT4G Features

  • 40V drain-to-source breakdown voltage.
  • 123A continuous drain current (Tc).
  • Low Rds(on) for minimal conduction losses.
  • AEC Q101 qualified for automotive use.
  • Pb-Free and RoHS compliant.

NVD5890NT4G Applications

  • Used in power management circuits
  • Suitable for motor control applications
  • Ideal for switching power supplies
  • Designed for high-current switching

NVD5890NT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVD5890NT4G MOSFET?

The drain-to-source voltage (Vds) is 40V.

What is the continuous drain current for the NVD5890NT4G MOSFET?

The continuous drain current is 123A at 25°C case temperature and 24A at 25°C ambient temperature.

What is the Rds On for the NVD5890NT4G MOSFET?

The Rds On is a maximum of 3.7mOhm at 50A drain current and 10V gate-source voltage.

What is the operating temperature range for the NVD5890NT4G MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVD5890NT4G MOSFET supplied in?

The NVD5890NT4G is supplied in a DPAK (TO-252-3) package.

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