NVD5890NLT4G The ON Semiconductor NVD5890NLT4G is a single N-Channel MOSFET with a 40V drain-to-source voltage. It offers a low on-resistance of 3.7mOhm at 10V.
Mfr Part #:

NVD5890NLT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD5890NLT4G is a single N-Channel MOSFET with a 40V drain-to-source voltage. It offers a low on-resistance of 3.7mOhm at 10V.
✓ Total Stock: 4,300 pcs
$ Price Range: $0.99

NVD5890NLT4G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,300 pcs
4300 pcs On Request 1 On Request On Request 17+ On Request On Request

NVD5890NLT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD5890NLT4G Description

Short technical summary and product information.

The ON Semiconductor NVD5890NLT4G is a high-performance N-Channel Power MOSFET designed for efficient power management applications. It features a drain-to-source voltage (Vdss) of 40V and a continuous drain current capability of up to 123A at case temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 3.7mOhm at 10V gate-to-source voltage, minimizing conduction losses. The device also boasts a gate threshold voltage of 2.5V at 250µA and a gate-to-source voltage range of ±20V.

 

This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It operates across a wide temperature range from -55°C to 175°C (TJ). The NVD5890NLT4G is AEC Q101 Qualified and PPAP Capable, indicating its suitability for demanding automotive and industrial applications. It is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NVD5890NLT4G Quick Information

Product Type: MOSFET
Series: NVD5890NLT4G
Canonical Name: NVD5890NLT4G N-Channel Power MOSFET
Subcategory: Single N-Channel

NVD5890NLT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5890NLT4G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5890NLT4G Features

  • 40V drain-to-source voltage rating.
  • Low 3.7mOhm Rds(on) at 10V.
  • High 123A continuous drain current.
  • Surface mount DPAK package.
  • AEC Q101 Qualified.

NVD5890NLT4G Applications

  • Suitable for power switching applications.
  • Ideal for high-current DC-DC converters.
  • Used in automotive power management.
  • Efficient for motor control circuits.

NVD5890NLT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVD5890NLT4G?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the typical on-resistance of the NVD5890NLT4G MOSFET?

The on-resistance (Rds On) is a maximum of 3.7mOhm at 50A and 10V gate-to-source voltage.

What is the continuous drain current rating for the NVD5890NLT4G?

The continuous drain current is 123A at the case temperature and 24A at the ambient temperature.

What package type is the NVD5890NLT4G MOSFET supplied in?

The NVD5890NLT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the operating temperature range for the NVD5890NLT4G?

The operating junction and storage temperature range is -55°C to 175°C.

Is the NVD5890NLT4G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVD5890NLT4G?

The Moisture Sensitivity Level is 1 Unlimited.

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